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SCT2H12NZ n-channel sic power mosfet marking taping code ? application ? outline ? inner circuit ? packaging specifications to-3pfm 1700v 3.7a v dss i d p d r ds(on) (typ.) 1.15? continuous drain current t c = 25c t c = 100c pulsed drain current parameter symbol value unit tube - type packaging reel size (mm) - SCT2H12NZ basic ordering unit (pcs) tape width (mm) - 30 3) long creepage distance 4) simple to drive 5) pb-free lead plating ; rohs compliant ? features 35w 1) low on-resistance 2) fast switching speed gate - source voltage (dc) v gss ? 6 to 22 v power dissipation (t c = 25c) p d 35 w gate - source surge voltage (t surge ? 300nsec) v gss-surge *3 ? 10 to 26 v junction temperature t j 175 c range of storage temperature t stg ? 55 to ? 175 c i d,pulse *2 9.2 a v dss 1700 v i d *1 3.7 a i d *1 2.6 a ? absolute maximum ratings (ta = 25c) drain - source voltage ? auxilialy power supplies ? switch mode power supplies (1) (2) (3) (1) gate (2) drain (3) source *1 body diode (1) (3) (2) *1 1/12 2017.07 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. datasheet
SCT2H12NZ *1 limited only by maximum temperature allowed. *2 pw ? 10? s, duty cycle ? 1% *3 example of acceptable vgs waveform *4 pulsed ? thermal resistance parameter symbol values unit min. typ. max. c/w thermal resistance, junction - case r thjc - 3.32 4.32 c/w thermal resistance, junction - ambient r thja - 36.8 50 c ? electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. soldering temperature, wavesoldering for 10s t sold - - 265 drain - source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 1700 - - v zero gate voltage drain current i dss v ds = 1700v, v gs = 0v ? a t j = 25c -0.110 t j = 150c -0.2 gate - source leakage current i gss ? v gs = ? 22v, v ds = 0v - - 100 na - 4.0 v gate - source leakage current i gss ? v gs = ? 6v, v ds = 0v -- ? 100 na gate threshold voltage v gs (th) v ds = v gs , i d = 0.9ma 1.6 2.8 2/12 2017.07 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. datasheet
SCT2H12NZ ? electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. s input capacitance c iss v gs = 0v - 184 - pf output capacitance c oss transconductance g fs *4 v ds = 10v, i d = 1.1a - 0.4 - v ds = 800v -16- reverse transfer capacitance c rss f = 1mhz - 6 - pf turn - on delay time t d(on) *4 v dd = 500v, i d = 1.1a -16- ns rise time t r *4 effective output capacitance, energy related c o(er) v gs = 0v v ds = 0v to 800v -17- fall time t f *4 r g = 0 ? -74- v gs = 18v/0v -21- turn - off delay time t d(off) *4 r l = 455 ? -35- ? j turn - off switching loss e off *4 -32- turn - on switching loss e on *4 v dd = 800v, i d =1.1a v gs = 18v/0v r g = 0 ? , l=2mh *e on includes diode reverse recovery -57- -14- ? gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. v -5- gate plateau voltage v (plateau) v dd = 500v, i d = 1a - 10.5 - nc gate - source charge q gs *4 i d =1a -4- gate - drain charge q gd *4 v gs = 18v total gate charge q g *4 v dd = 500v - ? gate input resistance r g f = 1mhz, open drain - 64 ? t j = 25c - 1.15 1.5 t j = 125c - 1.71 - static drain - source on - state resistance r ds(on) *4 v gs = 18v, i d = 1.1a 3/12 2017.07 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. datasheet
SCT2H12NZ ? body diode electrical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. a inverse diode direct current, pulsed i sm *2 --10a inverse diode continuous, forward current i s *1 t c = 25c --4 v reverse recovery time t rr *4 i f = 1.1a, v r = 800v di/dt = 300a/ ? s -21-ns reverse recovery charge q rr *4 forward voltage v sd *4 v gs = 0v, i s = 1.1a -4.3- -13-nc peak reverse recovery current i rrm *4 -1.1 - a ? typical transient thermal characteristics symbol value unit symbol value unit ws/k r th2 1939m c th2 1.64m r th3 567m c th3 64.5m r th1 816m k/w c th1 127 4/12 2017.07 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. datasheet
SCT2H12NZ ? electrical characteristic curves fig.1 power dissipation derating curve fig.2 maximum safe operating area power dissipation : p d [w] drain current : i d [a] junction temperature : t j [ c] drain - source voltage : v ds [v] fig.3 typical transient thermal resistance vs. pulse width transient thermal resistance : r th [k/w] pulse width : p w [s] 0 5 10 15 20 25 30 35 40 0 50 100 150 200 0.1 1 10 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t a = 25oc single pulse 0.01 0.1 1 10 100 0.1 1 10 100 1000 10000 t a = 25oc single pulse p w = 100 ? s p w = 1ms p w = 10ms p w = 100ms operation in this area is limited by r ds (on) 5/12 2017.07 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. datasheet
SCT2H12NZ ? electrical characteristic curves fig.4 typical output characteristics(i) fig.5 typical output characteristics(ii) fig.6 t j = 150 c typical output characteristics(i) fig.7 t j = 150 c typical output characteristics(ii) drain - source voltage : v ds [v] drain - source voltage : v ds [v] drain current : i d [a] drain current : i d [a] drain current : i d [a] drain - source voltage : v ds [v] drain current : i d [a] drain - source voltage : v ds [v] 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 012345 t a = 25oc pulsed v gs = 8v v gs = 14v v gs = 16v v gs = 18v v gs = 20v v gs = 12v v gs = 10v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 012345 t a = 150oc pulsed v gs = 8v v gs = 18v v gs = 16v v gs = 14v v gs = 12v v gs = 20v v gs = 10v 0 0.5 1 1.5 2 2.5 3 3.5 0246810 t a = 25oc pulsed v gs = 8v v gs = 10v v gs = 14v v gs = 16v v gs = 20v v gs = 12v v gs = 18v 0 0.5 1 1.5 2 2.5 3 3.5 0246810 t a = 150oc pulsed v gs = 10v v gs = 8v v gs = 18v v gs = 16v v gs = 20v v gs = 14v v gs = 12v 6/12 2017.07 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. datasheet
SCT2H12NZ ? electrical characteristic curves fig.9 typical transfer characteristics (ii) fig.8 typical transfer characteristics (i) drain current : i d [a] drain current : i d [a] fig.10 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [ c ] fig.11 transconductance vs. drain current transconductance : g fs [s] drain current : i d [a] gate - source voltage : v gs [v] gate - source voltage : v gs [v] 0.01 0.1 1 0.01 0.1 1 10 v ds = 10v pulsed t a = 175oc t a = 125oc t a = 75oc t a = 25oc t a = ? 25oc 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -50 0 50 100 150 200 v ds = 10v i d = 0.41ma 0.01 0.1 1 10 0 2 4 6 8 101214161820 v ds = 10v pulsed t a = 175oc t a = 125oc t a = 75oc t a = 25oc t a = ? 25oc 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 14 16 18 20 v ds = 10v pulsed t a = 175oc t a = 125oc t a = 75oc t a = 25oc t a = ? 25oc 7/12 2017.07 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. datasheet
SCT2H12NZ ? electrical characteristic curves fig.12 static drain - source on - state resistance vs. gate source voltage static drain - source on-state resistance : r ds(on) [ ? ] gate - source voltage : v gs [v] fig.13 static drain - source on - state resistance vs. junction temperature static drain - source on-state resistance : r ds(on) [ ? ] junction temperature : t j [oc] fig.14 static drain - source on - state resistance vs. drain current static drain - source on-state resistance : r ds(on) [ ? ] drain current : i d [a] 0 0.5 1 1.5 2 2.5 3 8 10121416182022 i d = 1.1a i d = 2.2a t a = 25oc pulsed 0 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 200 v gs = 18v pulsed i d = 2.2a i d = 1.1a 0.1 1 10 0.1 1 10 v gs = 18v pulsed t a = 175oc t a = 125oc t a = 75oc t a = 25oc t a = ? 25oc 8/12 2017.07 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. datasheet
SCT2H12NZ ? electrical characteristic curves fig.15 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] fig.17 switching characteristics switching time : t [ns] drain current : i d [a] fig.18 dynamic input characteristics total gate charge : q g [nc] gate - source voltage : v gs [v] coss stored energy : e oss [ ? j] fig.16 coss stored energy drain - source voltage : v ds [v] 0 1 2 3 4 5 6 7 0 200 400 600 800 1000 t a = 25oc 1 10 100 1000 0.1 1 10 100 1000 c iss c oss c rss t a = 25oc f = 1mhz v gs = 0v 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10121416 t a = 25oc v dd = 500v i d = 1a pulsed 10 100 1000 0.1 1 10 t f t d(on) t d(off) t a = 25oc v dd = 500v v gs = 18v r g = 0 ? pulsed t r 9/12 2017.07 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. datasheet
SCT2H12NZ ? electrical characteristic curves fig.19 typical switching loss vs. drain - source voltage switching energy : e [ ? j] drain - source voltage : v ds [v] fig.21 typical switching loss vs. external gate resistance switching energy : e [ ? j] external gate resistance : r g [ ? ] switching energy : e [ ? j] fig.20 typical switching loss vs. drain current drain current : i d [a] 0 50 100 150 200 250 012345 t a = 25oc v dd =800v v gs = 18v/0v r g =0 ? l=2mh e on e off 0 10 20 30 40 50 60 70 80 90 100 500 600 700 800 900 1000 1100 t a = 25oc i d =1.1a v gs = 18v/0v r g =0 ? l=2mh e on e off 0 20 40 60 80 100 120 140 0 20406080100 t a = 25oc v dd =800v i d =1.1a v gs = 18v/0v l=2mh e on e off 10/12 2017.07 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. datasheet
SCT2H12NZ ? electrical characteristic curves fig.22 inverse diode forward current vs. source - drain voltage inverse diode forward current : i s [a] source - drain voltage : v sd [v] fig.23 reverse recovery time vs.inverse diode forward current reverse recovery time : t rr [ns] inverse diode forward current : i s [a] 0.01 0.1 1 10 012345678 v gs = 0v pulsed t a = 175oc t a = 125oc t a = 75oc t a = 25oc t a = ? 25oc 10 100 1000 110 t a = 25oc di / dt = 300a / us v r = 800v v gs = 0v pulsed 11/12 2017.07 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. datasheet
SCT2H12NZ ? measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 switching energy measurement circuit fig.3-2 switching waveforms fig.4-1 reverse recovery time measurement circuit fig.4-2 reverse recovery waveform 90% 90% 90% 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v gs r g v ds d.u.t. i d r l v dd v gs i g(const.) v ds d.u.t. i d r l v dd v g v gs charge q g q gs q gd v surge i rr e on = i d v ds e off = i d v ds i d v ds driver mosfet r g d.u.t. l i f v dd same type device as d.u.t. d.u.t. i d t rr i rr 100% i rr i f 0 i rr 90% d rr / d t i rr 10% driver mosfet r g d.u.t. l i f v dd d.u.t. 12/12 2017.07 - rev.b www.rohm.com ? 2015 rohm co., ltd. all rights reserved. datasheet
r1102 s www.rohm.com ? 201 5 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes the information contained herein is subject to change without notice. before you use our products, please contact our sales representative and verify the latest specifica- tions : although rohm is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. rohm shall have no responsibility for any damages arising out of the use of our poducts beyond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13)
datasheet datasheet notice ? we rev.001 ? 2015 rohm co., ltd. all rights reserved. general precaution 1. before you use our pro ducts, you are requested to care fully read this document and fully understand its contents. rohm shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny rohms products against warning, caution or note contained in this document. 2. all information contained in this docume nt is current as of the issuing date and subj ec t to change without any prior notice. before purchasing or using rohms products, please confirm the la test information with a rohm sale s representative. 3. the information contained in this doc ument is provi ded on an as is basis and rohm does not warrant that all information contained in this document is accurate an d/or error-free. rohm shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information.

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